PART |
Description |
Maker |
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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IDT71V424L IDT71V424S10PH IDT71V424S10PHG IDT71V42 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) 512K X 8 STANDARD SRAM, 15 ns, PDSO44 TRANS NPN W/RES 60 HFE NS-B1 512K X 8 STANDARD SRAM, 10 ns, PDSO36 TRANS NPN W/RES 80 HFE NS-B1 3.3V 512K x 8 Static RAM Center Pwr & Gnd Pinout
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Integrated Device Technology, Inc. IDT[Integrated Device Technology]
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K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDIP32 512K X 8 STANDARD SRAM, 55 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
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AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 |
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
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Atmel Corp. Atmel, Corp.
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K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44 From old datasheet system 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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SAMSUNG[Samsung semiconductor] Samsung Electronic
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HY62V8400 HY62V8400LT2 HY62V8400LG HY62V8400LP HY6 |
512K X 8-bit CMOS SRAM
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Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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UPD444008LLE-A10 UPD444008LLE-A12 UPD444008LLE-A8 |
4M-bit(512K-word x 8-bit) Fast SRAM
|
NEC
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UPD4416008 UPD4416008G5-A15-9JF UPD4416008G5-A17-9 |
2M X 8 STANDARD SRAM, 17 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54 16M-BIT CMOS FAST SRAM 2M-WORD BY 8-BIT
|
NEC
|
LY62L5128SL-55LLE LY62L5128RL-55LLE |
512K X 8 BIT LOW POWER CMOS SRAM
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Lyontek Inc.
|
BS616LV8016DIP55 BS616LV8016FCP55 BS616LV8016FC70 |
Very Low Power CMOS SRAM 512K X 16 bit
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Brilliance Semiconductor
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LY61L5128AML-10 LY61L5128AML-10T LY61L5128AML-10I |
512K X 8 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
BS62LV4006SCP55 BS62LV4006STC55 BS62LV4006HIG55 BS |
Very Low Power CMOS SRAM 512K X 8 bit
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Brilliance Semiconducto... http:// Brilliance Semiconductor
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